Диоды - выпрямители - одиночные - Дискретный полупроводник - BYV29-600,127 BAS216,135 BAS216,115 BY359-1500,127

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип диода	Напряжение - Реверс постоянного тока (Vr) (макс.)	Текущий - средний отрегулированный (Io)	Напряжение - Вперед (Vf) (Макс.) @ Если	скорость	Время обратного восстановления (trr)	Текущий - обратный утечек @ Vr	Емкость @ Vr, F	Тип монтажа	Упаковка / чехол	Пакет устройств поставщика	Рабочая температура - Соединение
BYV29-600,127	WeEn Semiconductors	DIODE GEN PURP 600V 9A TO220AC	Active	Standard	600V	9A	1.25V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	50µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
BAS216,135	NXP USA Inc.	DIODE GEN PURP 75V 250MA SOD2	Obsolete	Standard	75V	250mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	1µA @ 75V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-110	SOD110	150°C (Max)
BAS216,115	NXP USA Inc.	DIODE GEN PURP 75V 250MA SOD2	Obsolete	Standard	75V	250mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	1µA @ 75V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-110	SOD110	150°C (Max)
BY359-1500,127	NXP USA Inc.	DIODE GEN PURP 1.5KV 10A TO220AC	Obsolete	Standard	1500V	10A (DC)	1.8V @ 20A	Standard Recovery >500ns, > 200mA (Io)	600ns	100µA @ 1300V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
BY329-1500S,127	NXP USA Inc.	DIODE GEN PURP 1.5KV 6A TO220AC	Obsolete	Standard	1500V	6A (DC)	1.6V @ 6.5A	Fast Recovery =< 500ns, > 200mA (Io)	160ns	250µA @ 1300V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
1PS193,135	NXP USA Inc.	DIODE GEN PURP 80V 215MA SMT3	Obsolete	Standard	80V	215mA (DC)	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	500nA @ 80V	1.5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3; MPAK	150°C (Max)
1PS193,115	NXP USA Inc.	DIODE GEN PURP 80V 215MA SMT3	Obsolete	Standard	80V	215mA (DC)	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	500nA @ 80V	1.5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3; MPAK	150°C (Max)
BYR29-800,127	WeEn Semiconductors	DIODE GEN PURP 800V 8A TO220AC	Active	Standard	800V	8A	1.5V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
BY329X-1200,127	NXP USA Inc.	DIODE GEN PURP 1.2KV 8A TO220F	Obsolete	Standard	1200V	8A	1.85V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	145ns	1mA @ 1000V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
1PS59SB20,115	NXP USA Inc.	DIODE SCHOTTKY 40V 500MA SMT3	Obsolete	Schottky	40V	500mA (DC)	550mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	90pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3; MPAK	125°C (Max)
1N4148,113	NXP USA Inc.	DIODE GEN PURP 100V 200MA ALF2	Discontinued at -	Standard	100V	200mA (DC)	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	25nA @ 20V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	ALF2	200°C (Max)
1N4148,133	NXP USA Inc.	DIODE GEN PURP 100V 200MA ALF2	Obsolete	Standard	100V	200mA (DC)	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	25nA @ 20V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	ALF2	-
1N4148,143	NXP USA Inc.	DIODE GEN PURP 100V 200MA ALF2	Obsolete	Standard	100V	200mA (DC)	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	25nA @ 20V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	ALF2	200°C (Max)
PMEG6010AED,115	Nexperia USA Inc.	DIODE SCHOTTKY 60V 1A 6TSOP	Obsolete	Schottky	60V	1A (DC)	650mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	350µA @ 60V	60pF @ 4V, 1MHz	Surface Mount	SC-74, SOT-457	6-TSOP	150°C (Max)
PRLL4001,115	NXP USA Inc.	DIODE GEN PURP 50V MELF	Obsolete	Standard	50V	-	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Surface Mount	SOD-87	MELF	-65°C ~ 175°C
PRLL5819,115	NXP USA Inc.	DIODE SCHOTTKY 40V 1A MELF	Obsolete	Schottky	40V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	50pF @ 4V, 1MHz	Surface Mount	SOD-87	MELF	125°C (Max)
1N914B,113	NXP USA Inc.	DIODE GEN PURP 100V 200MA ALF2	Obsolete	Standard	100V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	ALF2	175°C (Max)
BYD17D,115	NXP USA Inc.	DIODE AVALANCHE 200V 1.5A MELF	Obsolete	Avalanche	200V	1.5A	1.05V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	1µA @ 200V	21pF @ 0V, 1MHz	Surface Mount	SOD-87	MELF	-65°C ~ 175°C
BYD17G,115	NXP USA Inc.	DIODE AVALANCHE 400V 1.5A MELF	Obsolete	Avalanche	400V	1.5A	1.05V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	1µA @ 400V	21pF @ 0V, 1MHz	Surface Mount	SOD-87	MELF	-65°C ~ 175°C
BYD17J,115	NXP USA Inc.	DIODE AVALANCHE 600V 1.5A MELF	Obsolete	Avalanche	600V	1.5A	1.05V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	1µA @ 600V	21pF @ 0V, 1MHz	Surface Mount	SOD-87	MELF	-65°C ~ 175°C
BYD37M,115	NXP USA Inc.	DIODE AVALANCHE 1KV 600MA MELF	Obsolete	Avalanche	1000V	600mA	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	1µA @ 1000V	20pF @ 0V, 1MHz	Surface Mount	SOD-87	MELF	-65°C ~ 175°C
BYD77B,115	NXP USA Inc.	DIODE AVALANCHE 100V 850MA MELF	Obsolete	Avalanche	100V	850mA	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 100V	50pF @ 0V, 1MHz	Surface Mount	SOD-87	MELF	-65°C ~ 175°C
BYD77D,115	NXP USA Inc.	DIODE AVALANCHE 200V 850MA MELF	Obsolete	Avalanche	200V	850mA	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 200V	50pF @ 0V, 1MHz	Surface Mount	SOD-87	MELF	-65°C ~ 175°C
BYD17K,135	NXP USA Inc.	DIODE AVALANCHE 800V 1.5A MELF	Obsolete	Avalanche	800V	1.5A	1.05V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	1µA @ 800V	21pF @ 0V, 1MHz	Surface Mount	SOD-87	MELF	-65°C ~ 175°C
BAT254,115	NXP USA Inc.	DIODE SCHOTTKY 30V 200MA SOD2	Obsolete	Schottky	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SOD-110	SOD110	125°C (Max)
PRLL5818,115	NXP USA Inc.	DIODE SCHOTTKY 30V 1A MELF	Obsolete	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	50pF @ 4V, 1MHz	Surface Mount	SOD-87	MELF	125°C (Max)
BYC10B-600,118	WeEn Semiconductors	DIODE GEN PURP 500V 10A D2PAK	Active	Standard	500V	10A	2.9V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	200µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	150°C (Max)
BYC5B-600,118	WeEn Semiconductors	DIODE GEN PURP 500V 5A D2PAK	Active	Standard	500V	5A	2.9V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	150°C (Max)
BYC8B-600,118	WeEn Semiconductors	DIODE GEN PURP 500V 8A D2PAK	Active	Standard	500V	8A	2.9V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	52ns	150µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	150°C (Max)
BYR29-600,127	WeEn Semiconductors	DIODE GEN PURP 600V 8A TO220AC	Active	Standard	600V	8A	1.5V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
BYR29X-600,127	WeEn Semiconductors	DIODE GEN PURP 600V 8A TO220F	Active	Standard	600V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
BYV29B-600,118	WeEn Semiconductors	DIODE GEN PURP 600V 9A D2PAK	Active	Standard	600V	9A	1.25V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	50µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	150°C (Max)
BYC15X-600,127	WeEn Semiconductors	DIODE GEN PURP 500V 15A TO220F	Active	Standard	500V	15A	2.9V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	200µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
BYC5X-600,127	WeEn Semiconductors	DIODE GEN PURP 500V 5A TO220F	Active	Standard	500V	5A	2.9V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
BYR29X-800,127	WeEn Semiconductors	DIODE GEN PURP 800V 8A TO220F	Active	Standard	800V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
BYV25F-600,127	WeEn Semiconductors	DIODE GEN PURP 600V 5A TO220AC	Active	Standard	600V	5A	1.9V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
BYV25FX-600,127	WeEn Semiconductors	DIODE GEN PURP 600V 5A TO220F	Active	Standard	600V	5A	1.9V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
BYV29FD-600,118	WeEn Semiconductors	DIODE GEN PURP 600V 9A DPAK	Active	Standard	600V	9A	1.9V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	150°C (Max)
NUR460,133	NXP USA Inc.	DIODE GEN PURP 600V 4A DO201AD	Obsolete	Standard	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	50µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	150°C (Max)
BYC10D-600,127	WeEn Semiconductors	DIODE GEN PURP 500V 10A TO220AC	Active	Standard	500V	10A	2.5V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	18ns	200µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
BYC5D-500,127	WeEn Semiconductors	DIODE GEN PURP 500V 5A TO220AC	Active	Standard	500V	5A	2V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	16ns	40µA @ 500V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
BYC5DX-500,127	WeEn Semiconductors	DIODE GEN PURP 500V 5A TO220F	Active	Standard	500V	5A	2V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	16ns	40µA @ 500V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
BYC8D-600,127	WeEn Semiconductors	DIODE GEN PURP 600V 8A TO220AC	Active	Standard	600V	8A	2.9V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	40µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
BYC8DX-600,127	WeEn Semiconductors	DIODE GEN PURP 600V 8A TO220F	Active	Standard	600V	8A	2.9V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	40µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
BYV25FB-600,118	WeEn Semiconductors	DIODE GEN PURP 600V 5A D2PAK	Active	Standard	600V	5A	1.9V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	150°C (Max)
BYV29F-600,127	WeEn Semiconductors	DIODE GEN PURP 600V 9A TO220AC	Active	Standard	600V	9A	1.9V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
BYV29FB-600,118	WeEn Semiconductors	DIODE GEN PURP 600V 9A D2PAK	Active	Standard	600V	9A	1.9V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	150°C (Max)
NUR460/L03,112	WeEn Semiconductors	DIODE GEN PURP 600V 4A DO201AD	Obsolete	Standard	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	50µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	150°C (Max)
NUR460P,133	WeEn Semiconductors	DIODE GEN PURP 600V 4A DO201AD	Obsolete	Standard	600V	4A	1.05V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	175°C (Max)
NUR460P/L01U	WeEn Semiconductors	DIODE GEN PURP 600V 4A DO201AD	Obsolete	Standard	600V	4A	1.05V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	175°C (Max)