ダイオード - 整流器 - シングル - ディスクリート半導体製品 - NUR460P/L02U NUR460P/L03U NUR460P/L04U BYC20X-600PQ

品番	メーカー/ブランド	簡単な説明	部品ステータス	ダイオードタイプ	電圧 - DC逆（Vr）（最大）	電流 - 平均整流（Io）	電圧 - フォワード（Vf）（最大）@ If	速度	逆回復時間（trr）	電流 - 逆リーク（Vr）	容量Vr、F	取付タイプ	パッケージ/ケース	サプライヤデバイスパッケージ	動作温度 - ジャンクション
NUR460P/L02U	WeEn Semiconductors	DIODE GEN PURP 600V 4A DO201AD	Obsolete	Standard	600V	4A	1.05V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	175°C (Max)
NUR460P/L03U	WeEn Semiconductors	DIODE GEN PURP 600V 4A DO201AD	Obsolete	Standard	600V	4A	1.05V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	175°C (Max)
NUR460P/L04U	WeEn Semiconductors	DIODE GEN PURP 600V 4A DO201AD	Obsolete	Standard	600V	4A	1.05V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	175°C (Max)
BYC20X-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 20A TO220F	Active	Standard	600V	20A	2.5V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	175°C (Max)
PMEG2005AEA/DG,115	Nexperia USA Inc.	DIODE SCHOTTKY 20V 500MA SOD323	Obsolete	Schottky	20V	500mA (DC)	390mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	80pF @ 1V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	140°C (Max)
NURS360BJ	WeEn Semiconductors	DIODE GEN PURP 600V 3A SOD132	Obsolete	Standard	600V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	-	-	Surface Mount	DO-214AA, SMB	SMB	175°C (Max)
BYC10-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 10A TO220AC	Active	Standard	600V	10A	1.8V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	19ns	-	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
BYC10X-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 10A TO220F	Active	Standard	600V	10A	2.9V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	200µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
BAS116T,115	NXP USA Inc.	DIODE GEN PURP 75V 215MA SC75	Obsolete	Standard	75V	215mA (DC)	1.25V @ 150mA	Standard Recovery >500ns, > 200mA (Io)	3µs	5nA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-75, SOT-416	SC-75	150°C (Max)
BAT54T,115	NXP USA Inc.	DIODE SCHOTTKY 30V 200MA SC75	Obsolete	Schottky	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-75, SOT-416	SC-75	150°C (Max)
BYC15-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 15A TO220AC	Active	Standard	600V	15A	3.2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	18ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
BYC20D-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 20A TO220AC	Active	Standard	600V	20A	2.9V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
BYC20DX-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 20A TO220F	Active	Standard	600V	20A	2.9V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220F	175°C (Max)
BYC30WT-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 30A TO247-3	Active	Standard	600V	30A	2.75V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	22ns	10µA @ 600V	-	Through Hole	TO-247-3	TO-247-3	175°C (Max)
NUR460P/L05U	WeEn Semiconductors	DIODE GEN PURP 600V 4A DO201AD	Obsolete	Standard	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1.5V	-	Through Hole	DO-201AD, Axial	DO-201AD	-
NUR460P/L06U	WeEn Semiconductors	DIODE GEN PURP 600V 4A DO201AD	Obsolete	Standard	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-
NUR460P/L07U	WeEn Semiconductors	DIODE GEN PURP 600V 4A DO201AD	Obsolete	Standard	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-
NUR460PU	WeEn Semiconductors	DIODE GEN PURP 600V 4A DO201AD	Obsolete	Standard	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-
BYC8B-600PJ	WeEn Semiconductors	DIODE GEN PURP 600V 8A D2PAK	Active	Standard	600V	8A	3.4V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	18ns	20µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
BYC5-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 5A TO220AC	Active	Standard	600V	5A	3.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
BYC5X-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 5A TO220F	Active	Standard	600V	5A	3.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220F	-65°C ~ 175°C
BYV10EX-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 10A TO220F	Active	Standard	600V	10A	2V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	-65°C ~ 175°C
PMEG1201AESFYL	Nexperia USA Inc.	DIODE SCHOTTKY 12V 0.1A SOD962	Obsolete	Schottky	12V	100mA	200mV @ 30mA	Fast Recovery =< 500ns, > 200mA (Io)	2.2ns	2mA @ 12V	26pF @ 1V, 1MHz	Surface Mount	0201 (0603 Metric)	DSN0603-2	125°C (Max)
1PS76SB21/ZLX	Nexperia USA Inc.	DIODE SCHOTTKY 40V 200MA SOD323	Obsolete	Schottky	40V	200mA (DC)	550mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	15µA @ 30V	50pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	125°C (Max)
BYC30-600P,127	WeEn Semiconductors	DIODE GEN PURP 600V 30A TO220AC	Active	Standard	600V	30A	1.8V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
BYC60W-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 60A TO247-2	Active	Standard	600V	60A	2.6V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	-	Through Hole	TO-247-2	TO-247-2	175°C (Max)
BYC75W-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 75A TO247-2	Active	Standard	600V	75A	2.75V @ 75A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	-	Through Hole	TO-247-2	TO-247-2	175°C (Max)
BYR16W-1200Q	WeEn Semiconductors	DIODE GEN PURP 1.2KV 16A TO247-2	Active	Standard	1200V	16A	2.7V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	105ns	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247-2	175°C (Max)
BYR29X-800PQ	WeEn Semiconductors	DIODE GEN PURP 800V 8A TO220F	Active	Standard	800V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	10µA @ 800V	-	Through Hole	TO-220-2 Full Pack	TO-220F	175°C (Max)
BYT79X-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 15A TO220F	Active	Standard	600V	15A	1.38V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220F	175°C (Max)
BYV10ED-600PJ	WeEn Semiconductors	DIODE GEN PURP 600V 10A DPAK	Active	Standard	600V	10A	2V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	175°C (Max)
BYV29X-600AQ	WeEn Semiconductors	DIODE GEN PURP TO220F	Active	-	-	-	-	-	-	-	-	-	-	-	-
BYV60W-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 60A TO247-2	Active	Standard	600V	60A	2V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	10µA @ 600V	-	Through Hole	TO-247-2	TO-247-2	175°C (Max)
BYC30B-600PJ	WeEn Semiconductors	DIODE GEN PURP 600V 30A D2PAK	Active	Standard	600V	30A	2.75V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
BYV30-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 30A TO220AC	Active	Standard	600V	30A	1.55V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
BYV30B-600PJ	WeEn Semiconductors	DIODE GEN PURP 600V 30A D2PAK	Active	Standard	600V	30A	1.55V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
BYV30JT-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 30A TO-3P	Active	Standard	600V	30A	1.8V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	10µA @ 600V	-	Through Hole	TO-3P-3, SC-65-3	TO-3P	175°C (Max)
BYV30W-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 30A TO247-2	Active	Standard	600V	30A	1.55V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Through Hole	TO-247-2	TO-247-2	175°C (Max)
BYV30X-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 30A TO220F	Active	Standard	600V	30A	1.55V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220F	175°C (Max)
NXPSC04650BJ	WeEn Semiconductors	DIODE SCHOTTKY 650V 4A D2PAK	Active	Silicon Carbide Schottky	650V	4A	1.7V @ 4A	No Recovery Time > 500mA (Io)	0ns	170µA @ 650V	130pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
NXPSC04650DJ	WeEn Semiconductors	DIODE SCHOTTKY 650V 4A DPAK	Active	Silicon Carbide Schottky	650V	4A	1.7V @ 4A	No Recovery Time > 500mA (Io)	0ns	170µA @ 650V	130pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	175°C (Max)
NXPSC04650XQ	WeEn Semiconductors	DIODE SCHOTTKY 650V 4A TO220F	Active	Silicon Carbide Schottky	650V	4A	1.7V @ 4A	No Recovery Time > 500mA (Io)	0ns	170µA @ 650V	130pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220F	175°C (Max)
NXPSC06650BJ	WeEn Semiconductors	DIODE SCHOTTKY 650V 6A D2PAK	Active	Silicon Carbide Schottky	650V	6A	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	190pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
NXPSC06650DJ	WeEn Semiconductors	DIODE SCHOTTKY 650V 6A DPAK	Active	Silicon Carbide Schottky	650V	6A	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	190pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	175°C (Max)
NXPSC06650XQ	WeEn Semiconductors	DIODE SCHOTTKY 650V 6A TO220F	Active	Silicon Carbide Schottky	650V	6A	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	190pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220F	175°C (Max)
NXPSC08650BJ	WeEn Semiconductors	DIODE SCHOTTKY 650V 8A D2PAK	Active	Silicon Carbide Schottky	650V	8A	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	230µA @ 650V	260pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
NXPSC08650DJ	WeEn Semiconductors	DIODE SCHOTTKY 650V 8A DPAK	Active	Silicon Carbide Schottky	650V	8A	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	230µA @ 650V	260pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	175°C (Max)
NXPSC08650XQ	WeEn Semiconductors	DIODE SCHOTTKY 650V 8A TO220F	Active	Silicon Carbide Schottky	650V	8A	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	230µA @ 650V	260pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220F	175°C (Max)
NXPSC10650BJ	WeEn Semiconductors	DIODE SCHOTTKY 650V 10A D2PAK	Active	Silicon Carbide Schottky	650V	10A	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	250µA @ 650V	300pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
NXPSC10650DJ	WeEn Semiconductors	DIODE SCHOTTKY 650V 10A DPAK	Active	Silicon Carbide Schottky	650V	10A	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	250µA @ 650V	300pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	175°C (Max)